C, H, N and O in Si and characterization and simulation of materials and processes : proceedings of symposium N on carbon, hydrogen, nitrogen and oxygen in silicon and other elemental semiconductors, and symposium G on atomic scale characterization and simulation of materials and processes of the 1995 E-MRS spring conference, Strasbourg, France, May 22-26, 1995 / ed. by A. Borghesi ... [et al.]
| rdfs:label | "C, H, N and O in Si and characterization and simulation of materials and processes : proceedings of symposium N on carbon, hydrogen, nitrogen and oxygen in silicon and other elemental semiconductors, and symposium G on atomic scale characterization and simulation of materials and processes of the 1995 E-MRS spring conference, Strasbourg, France, May 22-26, 1995 / ed. by A. Borghesi ... [et al.]" |
| schema:name | "C, H, N and O in Si and characterization and simulation of materials and processes : proceedings of symposium N on carbon, hydrogen, nitrogen and oxygen in silicon and other elemental semiconductors, and symposium G on atomic scale characterization and simulation of materials and processes of the 1995 E-MRS spring conference, Strasbourg, France, May 22-26, 1995" |
| schema:author | European Materials Research Society |
| schema:contributor | Borghesi, Alessandro |
|
schema:same |
<http:/ |
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schema:main |
<https:/ |
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http:/ |
"1996" |
| schema:about | materialenkennis |
| halfgeleiders | |
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schema:in |
"en" |
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schema:is |
European Materials Research Society symposia proceedings |
| schema:isbn | "0444824138" |
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schema:number |
573 |
| schema:publication |
<https:/ |